收藏本站
High Voltage MOSFET
N-Channel Enhancement Mode
IXTA 2N80
IXTP 2N80
V DSS
I D25
R DS(on)
= 800 V
= 2 A
= 6.2 ?
Avalanche Energy Rated
Preliminary Data
Symbol
Test Conditions
Maximum Ratings
TO-220AB (IXTP)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
800
800
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
GD
S
D (TAB)
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
2
8
A
A
I AR
2
A
TO-263 AA (IXTA)
E AR
E AS
T C = 25 ° C
T C = 25 ° C
6
200
mJ
mJ
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 18 ?
5
V/ns
G
S
D (TAB)
P D
T C = 25 ° C
54
W
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
G = Gate,
S = Source,
D = Drain,
TAB = Drain
M d
Weight
Mounting torque
1.13/10 Nm/lb.in.
4 g
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
° C
International standard packages
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Fast switching times
Applications
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 125 ° C
800
2.5
5.5
± 100
25
500
V
V
nA
μ A
μ A
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
6.2
?
Space savings
High power density
? 2003 IXYS All rights reserved
98541B(01/03)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXTA300N04T2-7 MOSFET N-CH 40V 300A TO-263
IXTA32N20T MOSFET N-CH 200V 32A TO-263
IXTA36N30P MOSFET N-CH 300V 36A TO-263
IXTA3N100D2 MOSFET N-CH 1000V 3A D2PAK
IXTA3N120 MOSFET N-CH 1.2KV 3A TO-263
IXTA3N50D2 MOSFET N-CH 500V 3A D2PAK
IXTA3N60P MOSFET N-CH 600V 3A D2-PAK
IXTA48N20T MOSFET N-CH 200V 48A TO-263
相关代理商/技术参数
IXTA2N80P 功能描述:MOSFET 2 Amps 800V 6 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA2R4N120P 功能描述:MOSFET 2.4 Amps 1200V 7.5 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA300N04T2 功能描述:MOSFET 300 Amps 40V 0.025 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA300N04T2-7 功能描述:MOSFET 300 Amps 40V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA32N20T 功能描述:MOSFET 32 Amps 200V 78 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA32P05T 功能描述:MOSFET 32 Amps 50V 0.036 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA32P20T 功能描述:MOSFET TenchP Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA36N20T 功能描述:MOSFET 36 Amps 200V 60 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube